N-channel MOSFET with split gate trench technology for efficient switching in power applications, packaged in a DFN5060 case. It has a drain-source voltage rating of 40 V, continuous drain current of 45 A at 25°C and 28 A at 100°C, and total power dissipation of 31 W. Thermal resistance is 45°C/W from junction to ambient and 4°C/W from junction to case. The device operates from -55°C to +150°C, has a gate-source voltage rating of ±20 V, and offers a typical on-resistance of 6.6 mΩ at V GS=10 V and I D=35 A. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating.
MOSFET N-CH 40 45A DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCAC8D8N04YL-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |