Micro Commercial Components Corp. Single FETs, MOSFETs MCAC65N06Y-TP

N-channel MOSFET in a DFN5060 package for high-efficiency switching applications, rated for 60 V drain-source voltage and 65 A continuous drain current at 25°C. Features Split Gate Trench technology with a typical on-resistance of 5.7 mΩ at 10 V gate drive. Thermal resistance is 1.5°C/W junction-to-case and 50°C/W junction-to-ambient. Maximum junction and storage temperature is -55°C to +175°C. Epoxy encapsulation meets UL 94 V-0, and the device is lead-free, RoHS compliant, and halogen-free. Pulsed drain current reaches 260 A, single pulse avalanche energy is 144 mJ, and total power dissipation is 100 W. Capacitance values include 1740 pF input, 486 pF output, and 27 pF reverse transfer. Total gate charge is 34.5 nC. Meets AEC-Q200, IEC 60286-3, and MIL-STD-202 for automotive and industrial use.