Micro Commercial Components Corp. Bipolar Transistor Arrays, Pre-Biased IMH8N-TP

The IMH8N-TP is a dual NPN digital transistor array in a SOT-23-6L package, designed for switching applications. It has a collector-base and collector-emitter voltage rating of 50 V, an emitter-base voltage of 5 V, and a maximum collector current of 100 mA with a power dissipation of 300 mW. The junction temperature range is -55°C to +150°C. The device meets UL 94 V-0 flammability requirements, is RoHS compliant, and is halogen free. Thermal resistance is 417°C/W. The transition frequency is 200 MHz, and the DC current gain ranges from 100 to 600 at 5 V and 1 mA.