PNP bipolar transistor in a DFN1006-3 surface mount package, rated for a collector-emitter voltage of -65 V, collector current of -100 mA, and power dissipation of 150 mW. Operating junction and storage temperature range is -55°C to +150°C. Thermal resistance is 833°C/W junction to ambient. DC current gain ranges from 200 to 450 at -5 V collector-emitter voltage and -2 mA collector current. Collector-emitter saturation voltage is -0.65 V at -10 mA collector current and -0.5 mA base current. RoHS compliant and halogen free with epoxy meeting UL 94 V-0 flammability rating.
Bipolar (BJT) Transistor PNP 65V 100mA 150mW Surface Mount DFN1006-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-BC856BL3-TPTR-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |