Micro Commercial Components Corp. Single Bipolar Transistors BC639-10-BP

The BC639-10-BP is an NPN silicon bipolar transistor in a TO-92 through-hole package, measuring 4.30-4.70 mm in width and length with a height of up to 12.70 mm. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 1 A, and a power dissipation of 1 W. The junction and storage temperature range is -55°C to +150°C with a thermal resistance of 125°C/W. The DC current gain (hFE) is 63 to 160 at 2 V and 5 mA, and the transition frequency is 100 MHz. The collector-emitter saturation voltage is 0.5 V at 500 mA collector current and 50 mA base current. The epoxy encapsulation meets UL 94 V-0, and the part is RoHS compliant.