NPN silicon epitaxial transistor for RF, audio amplifier, and general purpose applications, housed in a TO-92 package with dimensions of 4.45 to 4.70 mm for leads A and B, and 12.70 mm for length C. Rated for a collector-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 400 mW. DC current gain (hFE) ranges from 120 to 240 for the Y grade. Operating and storage junction temperature range is -55°C to +125°C. Features a transconductance frequency (fT) of 80 MHz and complies with UL 94 V-0 flammability rating. RoHS compliant with lead-free finish. Packaged in bulk (BP).
Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 400mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SC1815-Y-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |