The 2N5401 is a PNP silicon bipolar transistor in a TO-92 package, rated for a collector-emitter voltage of -150 V, a continuous collector current of -600 mA, and a power dissipation of 625 mW at 25°C with derating above that temperature. It operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 200°C/W junction to ambient. The transition frequency is 100 to 300 MHz, and the DC current gain ranges from 50 to 300 depending on collector current. The device has a collector-base breakdown voltage of -160 V and an emitter-base breakdown voltage of -5 V. The TO-92 package dimensions are 4.30 to 4.70 mm in body width and 12.70 mm in length. The part is RoHS compliant with a lead-free finish, and meets UL 94 V-0 flammability rating. Moisture sensitivity level is 1.
Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2N5401-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |