Marktech Optoelectronics Cree XThin LED Chip Series UT190-85um

Description
Cree's XThin® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree's XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000-V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required.
Datasheet
Description
Cree's XThin® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree's XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000-V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required.
Datasheet

Suppliers

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Product
Description
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Latham, NY, USA
Cree XThin LED Chip Series
UT190-85um
Cree XThin LED Chip Series UT190-85um
Cree's XThin® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree's XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000-V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required.

Cree's XThin® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree's XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000-V ESD.

Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required.

Supplier's Site Datasheet

Technical Specifications

  Marktech Optoelectronics
Product Category Light Emitting Diodes (LED)
Product Number UT190-85um
Product Name Cree XThin LED Chip Series
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