MACOM mmW Power Amplifier XP1027-BD-000V

Description
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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Description
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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Suppliers

Company
Product
Description
Supplier Links
mmW Power Amplifier - XP1027-BD-000V - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
XP1027-BD-000V
mmW Power Amplifier XP1027-BD-000V
Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Supplier's Site
RF Amplifiers - 1465-1124-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
1465-1124-ND
RF Amplifiers 1465-1124-ND
RF Amplifier IC General Purpose 27GHz ~ 31GHz

RF Amplifier IC General Purpose 27GHz ~ 31GHz

Buy Now Datasheet
RF and Wireless - RF Amplifiers - XP1027-BD-000V - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
XP1027-BD-000V
RF and Wireless - RF Amplifiers XP1027-BD-000V
IC RF AMP GPS 27GHZ-31GHZ

IC RF AMP GPS 27GHZ-31GHZ

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number XP1027-BD-000V 1465-1124-ND XP1027-BD-000V
Product Name mmW Power Amplifier RF Amplifiers RF and Wireless - RF Amplifiers
Amplifier Type Power Amplifier Low Noise Amplifier; Power Amplifier
Frequency Range 27000 to 33000 MHz 27000 to 31000 MHz 27000 to 31000 MHz
Maximum Gain 21 dB 21 dB 21 dB
Output Power 34.5 dBm 34.5 dBm
Output Intercept Point (IP3) 43 dBm
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