MACOM Gain Block XB1007-BD-000V

Description
M/A-COM Tech’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is specifically designed for use in PtP radio applications and is well suited for other telecom applications such as SATCOM and VSAT.
Request a Quote Datasheet
Description
M/A-COM Tech’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is specifically designed for use in PtP radio applications and is well suited for other telecom applications such as SATCOM and VSAT.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gain Block - XB1007-BD-000V - Richardson RFPD
Downers Grove, IL, United States
Gain Block
XB1007-BD-000V
Gain Block XB1007-BD-000V
M/A-COM Tech’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is specifically designed for use in PtP radio applications and is well suited for other telecom applications such as SATCOM and VSAT.

M/A-COM Tech’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses M/A -COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is specifically designed for use in PtP radio applications and is well suited for other telecom applications such as SATCOM and VSAT.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number XB1007-BD-000V
Product Name Gain Block
Frequency Range 4000 to 11000 MHz
Unlock Full Specs
to access all available technical data

Similar Products

RF Amplifiers ICs - 7958035 - RS Components, Ltd.
RS Components, Ltd.
Specs
Amplifier Type Gain
RoHS Compliant RoHS
Gain Flatness 15.9 dB
View Details
GPS / GLONASS / COMPASS LNA - BGA725L6 - Infineon Technologies AG
Specs
RoHS Compliant RoHS
Frequency Range 1550 to 1615 MHz
Minimum Gain 20 dB
View Details
RF Amplifiers - BGA824N6E6327XTSA1 - 864210-BGA824N6E6327XTSA1 - Win Source Electronics
Specs
Applications RF Microwave
Package Type Surface Mount; TSNP-6-2
View Details
Low Phase Noise Amplifiers - HX2410 - Maury Microwave
Specs
Amplifier Type Low Noise Amplifier
Frequency Range 5 to 500 MHz
View Details