MACOM mmW Buffer Amplifier XB1005-BD-000V

Description
M/A-COM Tech’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.
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Description
M/A-COM Tech’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
mmW Buffer Amplifier - XB1005-BD-000V - Richardson RFPD
Downers Grove, IL, United States
mmW Buffer Amplifier
XB1005-BD-000V
mmW Buffer Amplifier XB1005-BD-000V
M/A-COM Tech’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.

M/A-COM Tech’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.

Supplier's Site Datasheet
Futian, China
RF and Wireless - RF Amplifiers
XB1005-BD-000V
RF and Wireless - RF Amplifiers XB1005-BD-000V
MMIC,VR,BUF,WIN

MMIC,VR,BUF,WIN

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers
Product Number XB1005-BD-000V XB1005-BD-000V
Product Name mmW Buffer Amplifier RF and Wireless - RF Amplifiers
Amplifier Type Buffer
Frequency Range 35000 to 45000 MHz 35000 to 45000 MHz
Maximum Gain 23 dB 27 dB
Output Power 16 dBm
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