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MACOM MNOS Capacitors

Description
MACOMs MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The temperature coefficient of capcitance is typically +55 ppm / ºC.

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Description
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MNOS Capacitors -  - MACOM
Lowell, MA, USA
MNOS Capacitors
MNOS Capacitors
MACOMs MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The temperature coefficient of capcitance is typically +55 ppm / ºC.

MACOMs MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The temperature coefficient of capcitance is typically +55 ppm / ºC.

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Technical Specifications

  MACOM
Product Category Capacitors
Product Name MNOS Capacitors
Configuration / Form Factor Chip Capacitor
Capacitance Type Fixed
Capacitance Range 1.00E-7 to 0.0022 microF
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