MACOM RF and Microwave Switch MASW-004103-13655P

Description
MA-COM's MASW-004103-1365 is a Surmount™ broadband monolithic SP4T switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch in applications up to 20 GHz. This Surface Mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid MIC designs incorporating beam lead and PIN diodes that require chip and wire assembly. The MASW-004103-1365 is fabricated using M/ACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Selective backside metallization is applied producing a Surface Mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.
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Description
MA-COM's MASW-004103-1365 is a Surmount™ broadband monolithic SP4T switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch in applications up to 20 GHz. This Surface Mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid MIC designs incorporating beam lead and PIN diodes that require chip and wire assembly. The MASW-004103-1365 is fabricated using M/ACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Selective backside metallization is applied producing a Surface Mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.
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Suppliers

Company
Product
Description
Supplier Links
RF and Microwave Switch - MASW-004103-13655P - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
MASW-004103-13655P
RF and Microwave Switch MASW-004103-13655P
MA-COM's MASW-004103-1365 is a Surmount™ broadband monolithic SP4T switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch in applications up to 20 GHz. This Surface Mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid MIC designs incorporating beam lead and PIN diodes that require chip and wire assembly. The MASW-004103-1365 is fabricated using M/ACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Selective backside metallization is applied producing a Surface Mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.

MA-COM's MASW-004103-1365 is a Surmount™ broadband monolithic SP4T switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch in applications up to 20 GHz. This Surface Mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid MIC designs incorporating beam lead and PIN diodes that require chip and wire assembly. The MASW-004103-1365 is fabricated using M/ACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Selective backside metallization is applied producing a Surface Mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.

Supplier's Site Datasheet
RF Switches - 1465-1731-2-ND - DigiKey
Thief River Falls, MN, United States
RF Switches
1465-1731-2-ND
RF Switches 1465-1731-2-ND
RF Switch IC General Purpose SP4T 20GHz 50Ohm

RF Switch IC General Purpose SP4T 20GHz 50Ohm

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RF Switches - MASW-004103-13655P - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switch IC General Purpose SP4T 20 GHz 50Ohm

RF Switch IC General Purpose SP4T 20 GHz 50Ohm

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Technical Specifications

  Richardson RFPD DigiKey Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches
Product Number MASW-004103-13655P 1465-1731-2-ND MASW-004103-13655P
Product Name RF and Microwave Switch RF Switches RF Switches
Package Type Die Surface Mount; 5-SMD, No Lead
Frequency Range 50 to 20000 MHz 50 to 20000 MHz 50 to 20000 MHz
Insertion Loss 0.5000 dB 1.2 dB 1.2 dB
Isolation 56 dB 32 dB 32 dB
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