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MACOM High Q MNOS Capacitors

Description
MACOMs MMI-9000 and 9100 Series Chip Capacitors feature high stand-off voltage and low dielectric loss due to our use of nitride/oxide dielectric layers. Gold bonding surfaces, top and bottom provide ease of bonding and minimum contact resistance. MIS capacitors have high insulation resistance, low dissipation factor, and low temperature coefficient, which are features that produce devices with excellent long term stability.

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Product
Description
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High Q MNOS Capacitors -  - MACOM
Lowell, MA, USA
High Q MNOS Capacitors
High Q MNOS Capacitors
MACOMs MMI-9000 and 9100 Series Chip Capacitors feature high stand-off voltage and low dielectric loss due to our use of nitride/oxide dielectric layers. Gold bonding surfaces, top and bottom provide ease of bonding and minimum contact resistance. MIS capacitors have high insulation resistance, low dissipation factor, and low temperature coefficient, which are features that produce devices with excellent long term stability.

MACOMs MMI-9000 and 9100 Series Chip Capacitors feature high stand-off voltage and low dielectric loss due to our use of nitride/oxide dielectric layers. Gold bonding surfaces, top and bottom provide ease of bonding and minimum contact resistance. MIS capacitors have high insulation resistance, low dissipation factor, and low temperature coefficient, which are features that produce devices with excellent long term stability.

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Technical Specifications

  MACOM
Product Category Capacitors
Product Name High Q MNOS Capacitors
Configuration / Form Factor Chip Capacitor
Capacitance Type Fixed
Electrolytic Capacitors Niobium / Niobium Oxide
Capacitance Range 1.00E-7 to 6.00E-4 microF
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