The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GTRB264318FC-V1-R0 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
