MACOM RF Amplifiers CMPA2735015S

Description
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)
Request a Quote Datasheet
Description
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Amplifiers - 1465-CMPA2735015SDKR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)

RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)

Buy Now Datasheet
RF Amplifiers - 1465-CMPA2735015STR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)

RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)

Buy Now Datasheet
RF Amplifiers - 1465-CMPA2735015SCT-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)

RF Amplifier IC Radar 2.7GHz ~ 3.5GHz 32-QFN (5x5)

Buy Now Datasheet
RF & MW Power Amplifier - CMPA2735015S - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
CMPA2735015S
RF & MW Power Amplifier CMPA2735015S
CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superiorproperties compared to silicon or gallium arsenide, including higher breakdownvoltage, higher saturated electron drift velocity and higher thermal conductivity.GaN HEMTs also offer greater power density and wider bandwidths comparedto Si and GaAs transistors. This MMIC contains a two-stage reactively matchedamplifier design approach enabling high power and power added efficiency tobe achieved in a 5mm x 5mm, surface mount (QFN package).

CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superiorproperties compared to silicon or gallium arsenide, including higher breakdownvoltage, higher saturated electron drift velocity and higher thermal conductivity.GaN HEMTs also offer greater power density and wider bandwidths comparedto Si and GaAs transistors. This MMIC contains a two-stage reactively matchedamplifier design approach enabling high power and power added efficiency tobe achieved in a 5mm x 5mm, surface mount (QFN package).

Supplier's Site
RF and Wireless - RF Amplifiers - CMPA2735015S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
CMPA2735015S
RF and Wireless - RF Amplifiers CMPA2735015S
IC AMP RADAR 2.7GHZ-3.5GHZ 32QFN

IC AMP RADAR 2.7GHZ-3.5GHZ 32QFN

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number 1465-CMPA2735015SDKR-ND CMPA2735015S CMPA2735015S
Product Name RF Amplifiers RF & MW Power Amplifier RF and Wireless - RF Amplifiers
Amplifier Type Low Noise Amplifier; Power Amplifier Power Amplifier
Applications Radar
RoHS Compliant RoHS
Frequency Range 2700 to 3500 MHz 2700 to 3500 MHz 2700 to 3500 MHz
Minimum Gain 33 dB ? to 33 dB
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