CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro base station amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty amplifiers.
RF Mosfet HEMT 50V 125mA 2.7GHz 16.5dB 80W 20-TSSOP
RF Mosfet HEMT 50V 125mA 2.7GHz 16.5dB 80W 20-TSSOP
RF Mosfet HEMT 50V 125mA 2.7GHz 16.5dB 80W 20-TSSOP
RF MOSFET HEMT 50V 20TSSOP
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV27060MP | 1465-CGHV27060MPDKR-ND | CGHV27060MP |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Plastic SMT | "20-TSSOP (0.173"", 4.40mm Width)" | Surface Mount |
| Power Gain | 16.5 dB |
