CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120P ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill package.
A high power RF Amplifier module with this device is available:
1203/BBM3K5ANQ
1208/BBM3K5OKO
RF Mosfet HEMT 28V 1A 2.5GHz 15.5dB 120W 440206
RF MOSFET HEMT 28V 440206 Product overview: CGH40120P from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-CGH40120P can be used for catalog matching and distributor lookup.
RF MOSFET HEMT 28V 440206
| Richardson RFPD | DigiKey | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CGH40120P | 1465-CGH40120P-ND | 285-CGH40120P | CGH40120P |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | 28V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |||
| Package Type | Ceramic Flangeless | 440206 | Tray | 440206 |
| Power Gain | 15.5 dB |
