The T2960BB45E is a press-pack insulated gate bipolar transistor designed for high-power switching applications with a collector-emitter voltage rating of 4500 V and a continuous collector current of 3000 A. It is packaged in a press-pack format, weighs 2.8 kg, and supports double-sided cooling with a mounting force of 75 to 85 kN. The device operates at junction temperatures from -40 to +125 °C, has a thermal resistance of 4.2 K/kW when double-sided cooled, and meets IEC 60286-3 standards for mounting. Its gate-emitter voltage is limited to ±20 V, and it features a turn-on energy of 11.5 J and turn-off energy of 17.5 J under specified conditions.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T2960BB45E |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
