The T2000BB45G is a press-pack insulated gate bipolar transistor designed for high-power switching applications, with a collector-emitter voltage rating of 4500 V and a continuous DC collector current of 2000 A. It is housed in a press-pack package and weighs 2.4 kg. The device operates within a junction temperature range of -40 to +125 °C and supports double-side cooling with a thermal resistance of 6.45 K/kW from junction to sink. The IGBT features a saturation voltage of 2.7 to 3.1 V at 2000 A and 25 °C, and a peak repetitive collector current of 4000 A. Diode forward voltage ranges from 3.35 to 3.65 V at 2000 A. The gate-emitter peak voltage is ±20 V, and the device meets IEC 60286-3 and RoHS standards for mounting and environmental compliance.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T2000BB45G |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
