The T1890BF65E is a 6500 V insulated gate bipolar transistor designed for high-power switching applications. It is packaged in a surface-mount, press-pack configuration with a weight of 3.2 kg and requires a mounting force of 55 to 75 kN. The device supports a DC collector current of 1890 A and a repetitive peak collector current of 3780 A at 1 ms. The collector-emitter saturation voltage ranges from 3.6 V to 5.2 V at 1890 A and 15 V gate voltage. Thermal resistance is 4.47 K/kW for double-side cooling, 6.79 K/kW for collector-side cooling, and 13.1 K/kW for emitter-side cooling. Operating and storage temperatures range from -40°C to +125°C. The part meets AEC-Q200 and RoHS standards.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1890BF65E |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T1890BF65E |
| VCES | 6500 volts |
