The T1800GB45A is a press-pack insulated gate bi-polar transistor designed for high-power switching applications with a collector-emitter voltage rating of 4500 V and a continuous collector current of 1800 A. It is mounted in a press-pack configuration with a weight of 2 kg and operates over a junction temperature range of -40 to +125 °C. The device features a collector-emitter saturation voltage of up to 4.0 V at 1800 A and 125 °C, and includes an integral diode with a forward voltage of up to 4.2 V. Thermal resistance from junction to sink is 7.3 K/kW when double-side cooled. The part meets AEC-Q200 and RoHS standards and supports a peak non-repetitive surge current of 42.5 kA for the diode under specified conditions.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1800GB45A |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
