The T1500EC33E is an insulated gate bipolar transistor designed for high-power switching applications with a collector-emitter voltage rating of 3300 V and continuous collector current of 1500 A. It is packaged in a module with a weight of 1.2 kg and operates within a junction temperature range of -40 to +125 °C. The device supports double-side cooling with a thermal resistance from junction to sink of 10.4 K/kW and requires a mounting force of 25 to 35 kN. Peak gate-emitter voltage is limited to ±20 V, and the transistor exhibits a collector-emitter saturation voltage of 2.57 to 2.97 V at 1500 A and 25 °C. Turn-on and turn-off energies are 3.9 J and 4.1 J respectively under specified conditions, with a short-circuit current capability of 4500 A for up to 10 µs.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1500EC33E |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T1500EC33E |
| VCES | 3300 volts |
