The T1440VC17E is an insulated gate bipolar transistor designed for high-power switching applications with a collector-emitter voltage rating of 1700 V and a continuous collector current of 1440 A. It is mounted in a package suitable for double-sided cooling, with a thermal resistance from junction to sink of 22.5 K/kW under double-sided cooling and weighs 0.65 kg. The device operates within a junction temperature range of -40 to +125 °C and has a peak gate-emitter voltage of ±20 V. The collector-emitter saturation voltage is 2.36 to 2.65 V at 1440 A and 25 °C. Repetitive peak collector current is 2880 A for 1 ms pulses, and short circuit current capability is 3600 A for up to 10 µs. The maximum power dissipation is 4.4 kW.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1440VC17E |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T1440VC17E |
| VCES | 1700 volts |
