The T1290BF65A is an insulated gate bipolar transistor designed for high-power switching applications with a collector-emitter voltage rating of 6500 V and a continuous DC collector current of 1290 A. It operates within a junction temperature range of -40 to +125°C and is housed in a press-pack package with a weight of 3.2 kg. The device supports double-side cooling with a thermal resistance of 6.56 K/kW for the IGBT and has a peak non-repetitive surge current capability of 10.9 kA for the diode. It meets the IEC 60286-3 standard for mounting and includes gate drive characteristics optimized for low switching losses. The IGBT exhibits a collector-emitter saturation voltage of 3.6 to 5.2 V at 1290 A and 25°C, with turn-on and turn-off energies of 9 J and 7.3 J respectively under specified conditions.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1290BF65A |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T1290BF65A |
| VCES | 6500 volts |
