The T1000TC33E is an insulated gate bipolar transistor designed for high-power switching applications with a collector-emitter voltage rating of 3300 V and a DC collector current of 1000 A. It is housed in a package with a mounting force of 15 to 25 kN and weighs 1.2 kg. The device operates within a junction temperature range of -40 to +125 °C and features a collector-emitter saturation voltage of up to 2.97 V at 1000 A and 15 V gate-emitter voltage. Thermal resistance varies from 15.6 K/kW for double-sided cooling to 40.6 K/kW for emitter-side cooling. The transistor meets standard IGBT performance criteria with a short-circuit current capability of 3000 A for up to 10 µs.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1000TC33E |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T1000TC33E |
| VCES | 3300 volts |
