The T1000EC33G is an insulated gate bipolar transistor designed for high-power switching applications, featuring a 3300 V collector-emitter voltage rating and a 1000 A continuous collector current. It is housed in a press-pack package with a weight of 1.2 kg and requires a mounting force of 25 to 35 kN. The device supports operation from -40 °C to +125 °C and is rated for 1800 V DC link voltage at 100 FIT failure rate. The IGBT has a collector-emitter saturation voltage of up to 3.80 V at 1000 A and 25 °C, and the integrated diode exhibits a forward voltage of up to 3.3 V. Thermal resistance is 15.6 K/kW for double-side cooling. The part meets no stated qualification standards beyond its electrical and thermal ratings.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T1000EC33G |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T1000EC33G |
| VCES | 3300 volts |
