The T0900EB45A is a press-pack insulated gate bipolar transistor for high-power switching, with a 4500 V collector-emitter voltage rating and a 900 A continuous collector current. It is housed in a press-pack package weighing 1.2 kg and operates with a junction temperature range of -40 to +125 °C. The peak gate-emitter voltage is ±20 V, and the collector-emitter saturation voltage is 2.8 to 4.0 V at 900 A and 15 V gate drive. Thermal resistance from junction to sink is 14 K/kW under double-sided cooling.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0900EB45A |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
