The T0900AF65E is an insulated gate bipolar transistor designed for high-power switching applications with a collector-emitter voltage rating of 6500 V and a continuous collector current of 900 A. It is packaged in a case suitable for double-side cooling, weighing 1.7 kg, with an operating junction temperature range of -40 to +125°C. The device has a collector-emitter saturation voltage of up to 5.2 V at 900 A and 15 V gate-emitter voltage, and thermal resistance of 9.4 K/kW when double-side cooled. It meets a maximum gate-emitter voltage of ±20 V and a peak repetitive collector current of 1800 A for 1 ms. Mounting force is specified between 25 and 35 kN.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0900AF65E |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0900AF65E |
| VCES | 6500 volts |
