The T0800TB45E is a press-pack insulated gate bipolar transistor designed for high-power switching applications, with a collector-emitter voltage rating of 4500 V and a DC collector current capacity of 800 A. It is packaged in an insulated press-pack format with a mounting force of 15 to 25 kN and weighs 1.2 kg. The device operates within a junction temperature range of -40 to +125 °C and has a thermal resistance of 15.6 K/kW when double-sided cooled. The collector-emitter saturation voltage is 2.8 to 3.2 V at 800 A and 15 V gate-emitter voltage. Turn-on and turn-off energies are 7 J and 4.3 J respectively under rated conditions. An anti-parallel diode is recommended for operation.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0800TB45E |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
