The T0800EB45G is a press-pack insulated gate bipolar transistor designed for high-power switching applications, with a collector-emitter voltage rating of 4500 V and a continuous collector current of 800 A. It features a peak repetitive collector current of 1600 A and a peak non-repetitive surge current of 5.72 kA for the diode. The device operates with a junction temperature range of -40 to +125 °C and has a maximum power dissipation of 6.4 kW for the IGBT and 4.05 kW for the diode. Thermal resistance is 15.6 K/kW when double-sided cooled. The package includes a mounting force of 25 to 35 kN and weighs 1.2 kg. The IGBT and diode characteristics are optimized for low turn-on and turn-off energy, with gate threshold voltage at 5.2 V and saturation voltage ranging from 2.75 to 3.9 V. The device meets AEC-Q200 qualification standards.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0800EB45G |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
