The T0710TC33A is an insulated gate bipolar transistor designed for high-power switching applications, featuring a collector-emitter voltage rating of 3300 V and a DC collector current of 710 A. It is packaged in a module with a weight of 1.2 kg and requires a mounting force of 15 to 25 kN. The device operates with a junction temperature range of -40 to +125 °C and supports double-sided cooling with thermal resistance of 21.8 K/kW for the IGBT and 43.2 K/kW for the diode. The IGBT exhibits a saturation voltage of 2.55 to 2.85 V at 710 A and 25 °C, while the integrated diode has a forward voltage of 2.95 to 3.25 V under the same conditions. Repetitive peak currents reach 1420 A for both IGBT and diode with a 1 ms pulse width. The part meets the AEC-Q200 qualification standard.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0710TC33A |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0710TC33A |
| VCES | 3300 volts |
