The T0600TB45A is a press-pack insulated gate bipolar transistor designed for high-power switching applications, with a collector-emitter voltage rating of 4500 V and a continuous collector current of 600 A. It operates within a junction temperature range of -40 to +125 °C. The device is packaged in a press-pack format with a weight of 1.2 kg and requires a mounting force of 15 to 25 kN. Thermal resistance from junction to sink is 21.8 K/kW for double-side cooling. The IGBT features a collector-emitter saturation voltage of 2.9 to 4.1 V at 600 A and 125 °C, and the integrated diode has a forward voltage of 3.6 to 4.0 V. The device supports a repetitive peak collector current of 1200 A and a peak non-repetitive surge current of up to 10.3 kA for the diode. Peak gate-emitter voltage is ±20 V.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0600TB45A |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
