The T0600NC17A is an insulated gate bipolar transistor designed for high-power switching applications, with a 1700 V collector-emitter voltage rating and a 600 A continuous collector current. It is housed in a module package weighing 0.5 kg and supports double-side cooling with a mounting force of 8 to 12 kN. The device operates within a junction temperature range of -40 to +125 °C. The collector-emitter saturation voltage is up to 2.65 V at 600 A and 15 V gate-emitter voltage. The diode forward voltage is up to 2.40 V at 600 A. Reverse recovery time is 0.5 µs under specified conditions. Thermal resistance from junction to sink is 54.1 K/kW for double-side cooled IGBT operation and 125 K/kW for double-side cooled diode operation.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0600NC17A |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0600NC17A |
| VCES | 1700 volts |
