The T0510VB45E is a press-pack insulated gate bipolar transistor rated for 4500 V collector-emitter voltage and 510 A continuous collector current, designed for high-power switching applications. It features a double-sided cooled package with a weight of 0.65 kg and a mounting force range of 12 to 16 kN. The device operates within a junction temperature range of -40 to +125 °C and exhibits a collector-emitter saturation voltage of 2.75 to 4.0 V at 510 A and 15 V gate-emitter voltage. Thermal resistance from junction to sink is 24.3 K/kW for double-sided cooling, 40.1 K/kW for collector-side cooling, and 62.3 K/kW for emitter-side cooling. The part includes integrated freewheel diode characteristics and meets standard IGBT performance requirements for industrial use.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0510VB45E |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
