The T0425VC33G is an insulated gate bipolar transistor designed for high-power switching applications, featuring a collector-emitter voltage rating of 3300 V and a continuous DC collector current of 425 A. It is packaged in a module with a mounting force requirement of 12 to 16 kN and weighs 0.65 kg. The device operates with a junction temperature range of -40 to +125 °C and supports double-side cooling with a thermal resistance of 36.4 K/kW for the IGBT and 57.6 K/kW for the diode. Peak non-repetitive surge current for the diode reaches 2800 A under specified conditions. The IGBT exhibits a collector-emitter saturation voltage of 2.65 to 2.95 V at 425 A and 25 °C, with turn-on and turn-off energies of 1.1 J and 1.12 J respectively under defined test conditions. The device meets the AEC-Q200 standard for automotive qualification.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0425VC33G |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0425VC33G |
| VCES | 3300 volts |
