The T0340VB45G is a press-pack insulated gate bipolar transistor designed for high-power switching applications, featuring a 4500 V collector-emitter voltage rating and a 340 A continuous DC collector current. It is housed in a press-pack package with a weight of 0.65 kg and supports double-side, collector-side, or emitter-side cooling. The device operates within a junction temperature range of -40 to +125 °C and meets IEC 60286-3 and RoHS standards. The integrated diode provides a 340 A continuous forward current with a reverse recovery time of 3.2 µs at 340 A and 500 A/µs di/dt. Maximum power dissipation is 2.7 kW under double-side cooling conditions.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0340VB45G |
| Product Name | Press-Pack IGBT |
| VCES | 4500 volts |
