The T0258HF65G is an insulated gate bipolar transistor designed for high-voltage power conversion applications, rated for a collector-emitter voltage of 6500 V and a continuous collector current of 258 A. It is housed in a package with a mounting force of 12 to 16 kN and weighs 825 g. The device operates within a junction temperature range of -40 to +125 °C. The collector-emitter saturation voltage ranges from 4.4 to 5.2 V at 258 A and 15 V gate-emitter voltage. Turn-on and turn-off energies are 1.8 J and 1.45 J respectively under specified conditions. Thermal resistance from junction to sink is 32.8 K/kW for double-sided cooling and 49.4 K/kW for collector-side cooling. The transistor meets AEC-Q200 and RoHS standards.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0258HF65G |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0258HF65G |
| VCES | 6500 volts |
