The T0140QC33G is an insulated gate bipolar transistor designed for high-power switching applications, featuring a 3300 V collector-emitter voltage rating and a 140 A continuous collector current. It is packaged in a module suitable for double-side cooling, with a thermal resistance from junction to sink of 108 K/kW under double-side cooled conditions. The device operates within a junction temperature range of -40 to +125 °C and has a peak gate-emitter voltage of ±20 V. The collector-emitter saturation voltage is 2.64 to 2.95 V at 140 A and 25 °C, and its integrated diode exhibits a forward voltage of 2.65 to 2.95 V under the same conditions. The part weighs 240 g and requires a mounting force of 4.5 to 6 kN. The critical diode di/dt is 350 A/µs, and the short-circuit current capability is 550 A with a maximum pulse width of 10 µs.
As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip. For additional technical details, please contact support .
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | T0140QC33G |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Series: Capsule Type - T0140QC33G |
| VCES | 3300 volts |
