Littelfuse, Inc. Ignition IGBT, 12 A, 410 V NGD8209NT4G

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are PbFree Devices
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Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are PbFree Devices
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Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, 12 A, 410 V - NGD8209NT4G - Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, 12 A, 410 V
NGD8209NT4G
Ignition IGBT, 12 A, 410 V NGD8209NT4G
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are PbFree Devices

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are PbFree Devices

Supplier's Site
Singapore
410V 12A 125W DPAK IGBT Transistor
279-NGD8209NT4G
410V 12A 125W DPAK IGBT Transistor 279-NGD8209NT4G
IGBT 410V 12A 125W DPAK-3 Product overview: NGD8209NT4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 410V, 12A, 125W, DPAK. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 410V, 12A, 125W, DPAK. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGD8209NT4G can be used for catalog matching and distributor lookup.

IGBT 410V 12A 125W DPAK-3 Product overview: NGD8209NT4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 410V, 12A, 125W, DPAK. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 410V, 12A, 125W, DPAK. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGD8209NT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
NGD8209NT4G
IGBT Transistors NGD8209NT4G
IGBT Transistors IGNITION IGBT 12A 410V

IGBT Transistors IGNITION IGBT 12A 410V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGD8209NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGD8209NT4G
Discrete Semiconductor Products - Transistors - IGBTs NGD8209NT4G
IGBT 410V 12A 125W DPAK-3

IGBT 410V 12A 125W DPAK-3

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number NGD8209NT4G 279-NGD8209NT4G NGD8209NT4G NGD8209NT4G
Product Name Ignition IGBT, 12 A, 410 V 410V 12A 125W DPAK IGBT Transistor IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2 volts
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