Littelfuse, Inc. Ignition IGBT, N-Channel, 20 A, 400 V NGD8201BNT4G

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable
  • Ignition IGBT, N-Channel, 20 A, 400 V - NGD8201BNT4G - Littelfuse, Inc.
    Littelfuse, Inc.
  • IGBTs - Single - NGD8201BNT4G - 929119-NGD8201BNT4G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - NGD8201BNT4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, N-Channel, 20 A, 400 V - NGD8201BNT4G - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 20 A, 400 V
NGD8201BNT4G
Ignition IGBT, N-Channel, 20 A, 400 V NGD8201BNT4G
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
IGBT Transistor
279-NGD8201BNT4G
IGBT Transistor 279-NGD8201BNT4G
Insulated Gate Bipolar Transistor, Product overview: NGD8201BNT4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGD8201BNT4G can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: NGD8201BNT4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGD8201BNT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - NGD8201BNT4G - 929119-NGD8201BNT4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - NGD8201BNT4G
929119-NGD8201BNT4G
IGBTs - Single - NGD8201BNT4G 929119-NGD8201BNT4G
Manufacturer: Littelfuse Inc. Win Source Part Number: 929119-NGD8201BNT4G Operating Temperature Range: -55°C ~ 175°C (TJ) Features: IGBT - 430 V 15 A 115 W Surface Mount TO-252, (D-Pak) Package: Reel - TR Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: Surface Mount Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: TO-252, (D-Pak) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095

Manufacturer: Littelfuse Inc.
Win Source Part Number: 929119-NGD8201BNT4G
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT - 430 V 15 A 115 W Surface Mount TO-252, (D-Pak)
Package: Reel - TR
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: Surface Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-252, (D-Pak)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
NGD8201BNT4G
IGBT Transistors NGD8201BNT4G
IGBT Transistors 400V 20A IGBT N-CHANNEL

IGBT Transistors 400V 20A IGBT N-CHANNEL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGD8201BNT4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGD8201BNT4G
Discrete Semiconductor Products - Transistors - IGBTs NGD8201BNT4G
IGBT 400V 20A 125W DPAK-3

IGBT 400V 20A 125W DPAK-3

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number NGD8201BNT4G 279-NGD8201BNT4G 929119-NGD8201BNT4G NGD8201BNT4G NGD8201BNT4G
Product Name Ignition IGBT, N-Channel, 20 A, 400 V IGBT Transistor IGBTs - Single - NGD8201BNT4G IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
VCE(on) 1.5 volts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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