Littelfuse, Inc. Ignition IGBT, N-Channel, 20 A, 400 V NGD8201BNT4G

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable
  • Ignition IGBT, N-Channel, 20 A, 400 V - NGD8201BNT4G - Littelfuse, Inc.
    Littelfuse, Inc.
  • IGBTs - Single - NGD8201BNT4G - 929119-NGD8201BNT4G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - NGD8201BNT4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, N-Channel, 20 A, 400 V - NGD8201BNT4G - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 20 A, 400 V
NGD8201BNT4G
Ignition IGBT, N-Channel, 20 A, 400 V NGD8201BNT4G
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Intergrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Pb-Free Package is Avialable

Supplier's Site
IGBTs - Single - NGD8201BNT4G - 929119-NGD8201BNT4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - NGD8201BNT4G
929119-NGD8201BNT4G
IGBTs - Single - NGD8201BNT4G 929119-NGD8201BNT4G
Manufacturer: Littelfuse Inc. Win Source Part Number: 929119-NGD8201BNT4G Operating Temperature Range: -55°C ~ 175°C (TJ) Features: IGBT - 430 V 15 A 115 W Surface Mount TO-252, (D-Pak) Package: Reel - TR Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: Surface Mount Part Status: Obsolete Categories: Discrete Semiconductor Products Case / Package: TO-252, (D-Pak) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095

Manufacturer: Littelfuse Inc.
Win Source Part Number: 929119-NGD8201BNT4G
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT - 430 V 15 A 115 W Surface Mount TO-252, (D-Pak)
Package: Reel - TR
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: Surface Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-252, (D-Pak)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095

Buy Now Datasheet
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Sheung Wan, Hong Kong
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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGD8201BNT4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
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Discrete Semiconductor Products - Transistors - IGBTs NGD8201BNT4G
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Supplier's Site

Technical Specifications

  Littelfuse, Inc. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number NGD8201BNT4G 929119-NGD8201BNT4G NGD8201BNT4G NGD8201BNT4G
Product Name Ignition IGBT, N-Channel, 20 A, 400 V IGBTs - Single - NGD8201BNT4G IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
VCE(on) 1.5 volts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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