This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Short-Circuit Withstand Capability Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
Insulated Gate Bipolar Transistor, Product overview: NGD15N41ACLT4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGD15N41ACLT4G can be used for catalog matching and distributor lookup.
Manufacturer: Littelfuse Inc.
Win Source Part Number: 1082977-NGD15N41ACLT
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 440V
Maximum Power Dissipation: 107W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 2.2V @ 4V, 10A
Turn-on and Turn-off delay time: -/4μs
Testing Conditions: 300V, 6.5A, 1 kOhm
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
IGBT 440V 15A DPAK
IGBT Transistors IGNITION IGBT 15 A, 410 V
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGD15N41ACLT4G | 279-NGD15N41ACLT4G | 1082977-NGD15N41ACLT4G | NGD15N41ACLT4G | NGD15N41ACLT4G |
| Product Name | Ignition IGBT, 15 A, 410 V | IGBT Transistor | IGBTs - Single - NGD15N41ACLT4G | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCE(on) | 1.9 volts | 2.2 volts |
