Littelfuse, Inc. Ignition IGBT, N-Channel, 20 A, 350 V NGB8206ANTF4G

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)
  • Ignition IGBT, N-Channel, 20 A, 350 V - NGB8206ANTF4G - Littelfuse, Inc.
    Littelfuse, Inc.
  • IGBTs - Single - NGB8206ANTF4G - 1082971-NGB8206ANTF4G - Win Source Electronics
    Win Source Electronics
  • IGBT 390V 20A 150W D2PAK3 - 461-NGB8206ANTF4G - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, N-Channel, 20 A, 350 V - NGB8206ANTF4G - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 20 A, 350 V
NGB8206ANTF4G
Ignition IGBT, N-Channel, 20 A, 350 V NGB8206ANTF4G
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)

Supplier's Site
IGBTs - Single - NGB8206ANTF4G - 1082971-NGB8206ANTF4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - NGB8206ANTF4G
1082971-NGB8206ANTF4G
IGBTs - Single - NGB8206ANTF4G 1082971-NGB8206ANTF4G
Manufacturer: Littelfuse Inc. Win Source Part Number: 1082971-NGB8206ANTF4 G Packaging: Reel - TR Mounting: SMD (SMT) Input Type: Logic Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 390V Maximum Power Dissipation: 150W Pulsed Collector Current: 50A Collector-emitter saturation voltage(Max): 1.9V @ 4.5V, 20A Turn-on and Turn-off delay time: -/5μs Testing Conditions: 300V, 9A, 1 kOhm, 5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Littelfuse Inc.
Win Source Part Number: 1082971-NGB8206ANTF4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 390V
Maximum Power Dissipation: 150W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 1.9V @ 4.5V, 20A
Turn-on and Turn-off delay time: -/5μs
Testing Conditions: 300V, 9A, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
IGBT Transistor
279-NGB8206ANTF4G
IGBT Transistor 279-NGB8206ANTF4G
Insulated Gate Bipolar Transistor, Product overview: NGB8206ANTF4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8206ANTF4G can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: NGB8206ANTF4G from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8206ANTF4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBT 390V 20A 150W D2PAK3 - 461-NGB8206ANTF4G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
IGBT 390V 20A 150W D2PAK3
461-NGB8206ANTF4G
IGBT 390V 20A 150W D2PAK3 461-NGB8206ANTF4G
IGBT 390V 20A 150W D2PAK3

IGBT 390V 20A 150W D2PAK3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
NGB8206ANTF4G
IGBT Transistors NGB8206ANTF4G
IGBT Transistors IGBT 20A 350V N-CHANNEL

IGBT Transistors IGBT 20A 350V N-CHANNEL

Buy Now Datasheet

Technical Specifications

  Littelfuse, Inc. Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number NGB8206ANTF4G 1082971-NGB8206ANTF4G 279-NGB8206ANTF4G 461-NGB8206ANTF4G NGB8206ANTF4G
Product Name Ignition IGBT, N-Channel, 20 A, 350 V IGBTs - Single - NGB8206ANTF4G IGBT Transistor IGBT 390V 20A 150W D2PAK3 IGBT Transistors
Polarity N-Channel
VCE(on) 1.3 volts 1.9 volts
PD 150000 milliwatts
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