This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)
Manufacturer: Littelfuse Inc.
Win Source Part Number: 1082969-NGB8206ANSL3
Packaging: Tube/Rail
Mounting: SMD (SMT)
Input Type: Logic
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 390V
Maximum Power Dissipation: 150W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 1.9V @ 4.5V, 20A
Turn-on and Turn-off delay time: -/5μs
Testing Conditions: 300V, 9A, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
IGBT Transistors IGBT 20A 350V N-CHANNEL
| Littelfuse, Inc. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGB8206ANSL3G | 1082969-NGB8206ANSL3G | NGB8206ANSL3G |
| Product Name | Ignition IGBT, N-Channel, 20 A, 350 V | IGBTs - Single - NGB8206ANSL3G | IGBT Transistors |
| Polarity | N-Channel | ||
| VCE(on) | 1.3 volts | 1.9 volts | |
| PD | 150000 milliwatts |
