This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Short-Circuit Withstand Capability Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
IGBT 440V 15A 107W D2PAK3
IGBT Transistors 15 AMP, 410V CLAMP
| Littelfuse, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NGB15N41ACLT4G | NGB15N41ACLT4G | NGB15N41ACLT4G |
| Product Name | Power Semiconductors & Control ICs - IGBTs - Ignition - Series: LGB15N41ATI - NGB15N41ACLT4G | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCE(on) | 1.9 volts |
