Littelfuse, Inc. Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor MUBW15-12A6K

RS Components, Ltd.
Newark, An Avnet Company

Description

IGBT E1 pack 1200V 19A CBI 1 package NPT - Discrete Semiconductors - IGBT Transistor Modules

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RS Components, Ltd.

Corby, Northants, United Kingdom

194596

IGBT E1 pack 1200V 19A CBI 1 package NPT - Discrete Semiconductors - IGBT Transistor Modules

Supplier's Site

Newark, An Avnet Company

Chicago, IL, United States

Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor
34AC1926

Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor 34AC1926

IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

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Technical Specifications

	RS Components, Ltd.	Newark, An Avnet Company
Product Category	Insulated Gate Bipolar Transistors (IGBT)	Insulated Gate Bipolar Transistors (IGBT)
Product Number	194596	34AC1926
Product Name		Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor
Polarity	N-Channel