Littelfuse, Inc. Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor MUBW15-12A6K

Description
IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
  • Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor - 34AC1926 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
Datasheet

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Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor - 34AC1926 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor
34AC1926
Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor 34AC1926
IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 34AC1926
Product Name Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor
PD 90000 milliwatts
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