IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 34AC1926 |
| Product Name | Igbt, Module, N-Ch, 1.2Kv, 19A; Transistor Polarity Ixys Semiconductor |
| PD | 90000 milliwatts |
