Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - P-Channel - Series: Polar™ - IXTR90P10P IXTR90P10P

Description
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Datasheet
Description
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated
Datasheet

Suppliers

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Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - P-Channel - Series: Polar™ - IXTR90P10P - IXTR90P10P - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - P-Channel - Series: Polar™ - IXTR90P10P
IXTR90P10P
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - P-Channel - Series: Polar™ - IXTR90P10P IXTR90P10P
Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching Fast intrinsic diode Rugged PolarP™ process Avalanche rated Low package inductance Dynamic dv/dt rated

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTR90P10P
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - P-Channel - Series: Polar™ - IXTR90P10P
Polarity P-Channel
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