Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTR68P20T |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - P-Channel - Series: Trench Gate - IXTR68P20T |
| Polarity | P-Channel |
