Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen4 - IXTP230N04T4M IXTP230N04T4M

Description
These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power conversion applications. With on-state resistance as low as 1.7 milliohms, these TrenchT4™ devices enable a reduction in the number of MOSFETs needed, especially in synchronous rectification. Paralleling multiple devices may not be necessary due to their high-current carrying capability and high power density, thereby simplifying the power system and improving its reliability at the same time. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated 175°C operating temperature International standard packages
Datasheet
Description
These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power conversion applications. With on-state resistance as low as 1.7 milliohms, these TrenchT4™ devices enable a reduction in the number of MOSFETs needed, especially in synchronous rectification. Paralleling multiple devices may not be necessary due to their high-current carrying capability and high power density, thereby simplifying the power system and improving its reliability at the same time. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated 175°C operating temperature International standard packages
Datasheet

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Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen4 - IXTP230N04T4M - IXTP230N04T4M - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen4 - IXTP230N04T4M
IXTP230N04T4M
Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen4 - IXTP230N04T4M IXTP230N04T4M
These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power conversion applications. With on-state resistance as low as 1.7 milliohms, these TrenchT4™ devices enable a reduction in the number of MOSFETs needed, especially in synchronous rectification. Paralleling multiple devices may not be necessary due to their high-current carrying capability and high power density, thereby simplifying the power system and improving its reliability at the same time. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated 175°C operating temperature International standard packages

These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power conversion applications. With on-state resistance as low as 1.7 milliohms, these TrenchT4™ devices enable a reduction in the number of MOSFETs needed, especially in synchronous rectification. Paralleling multiple devices may not be necessary due to their high-current carrying capability and high power density, thereby simplifying the power system and improving its reliability at the same time. Advantages: High power density Easy to mount Space savings Ultra low on-resistance RDS(on) High current handling capability Avalanche rated 175°C operating temperature International standard packages

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Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTP230N04T4M
Product Name Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen4 - IXTP230N04T4M
Polarity N-Channel
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