The IXTH2N300P3HV is an N-channel enhancement mode MOSFET designed for high-voltage applications such as power supplies, capacitor discharge, pulse circuits, and laser or X-ray generation systems. It is packaged in a TO-247HV case with a drain tab and weighs 6 g. The device has a maximum drain-source voltage of 3000 V, continuous drain current of 2.0 A at 25°C, and on-state resistance of 21 Ω at 10 V gate voltage and 1 A drain current. It supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.21 °C/W. The device is rated for gate-source voltage up to ±20 V continuous and ±30 V transient. It meets RoHS standards and is suitable for high power density designs with space-saving packaging.
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTH2N300P3HV |
| Product Name | 2000V - 3000V N-Channel Standard Power MOSFETs |
| Polarity | N-Channel |
